2sK3662 2006-11-17 1 toshiba field effect transistor silicon n channel mos type ( -mosii) 2sK3662 switching regulator, dc? dc converter, motor drive applications ? low drain-source on resistance: r ds (on) = 9.4 m ? (typ.) ? high forward transfer admittance: |y fs | = 55 s (typ.) ? low leakage current: i dss = 100 a (max) (v ds = 60 v) ? enhancement mode : v th = 1.3 to 2.5 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 60 v drain-gate voltage (r gs = 20 k ) v dgr 60 v gate-source voltage v gss 20 v dc (note 1) i d 35 drain current pulse (note 1) i dp 105 a drain power dissipation (tc = 25c) p d 35 w single pulse avalanche energy (note 2) e as 204 mj avalanche current i ar 35 a repetitive avalanche energy (note 3) e ar 3.5 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g . the application of high temperature/cu rrent/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliabilit y handbook (?handling precautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch ? c) 3.57 c/ w thermal resistance, channel to ambient r th (ch ? a) 62.5 c/ w note 1: ensure that the channel temperature does not exceed 150c. note 2: v dd = 25 v, t ch = 25c (initial), l = 227 h, i ar = 35 a, r g = 25 note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic-sensit ive device. please handle with caution. unit: mm jedec D jeita sc-67 toshiba 2-10r1b weight: 1.9 g (typ.)
2sK3662 2006-11-17 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cut-off current i dss v ds = 60 v, v gs = 0 v ? ? 100 a v (br) dss i d = 10 ma, v gs = 0 v 60 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = ?20 v 40 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 1.3 ? 2.5 v v gs = 4 v, id = 18 a ? 12.5 19 drain-source on resistance r ds (on) v gs = 10 v, i d = 18 a ? 9.4 12.5 m forward transfer admittance |y fs | v ds = 10 v, i d = 18 a 28 55 ? s input capacitance c iss ? 5120 ? reverse transfer capacitance c rss ? 300 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 500 ? pf rise time t r ? 6 ? turn-on time t on ? 19 ? fall time t f ? 20 ? switching time turn-off time t off duty 1%, t w = 10 s ? 115 ? ns total gate charge (gate-source plus gate-drain) q g ? 91 ? gate-source charge q gs ? 70 ? gate-drain (?miller?) charge q gd v dd 48 v, v gs = 10 v, i d = 35 a ? 21 ? nc source-drain diode ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 35 a pulse drain reverse current (note 1) i drp ? ? ? 105 a forward voltage (diode) v ds2f i dr1 = 35 a, v gs = 0 v ? ? ?1.5 v reverse recovery time t rr ? 60 ? ns reverse recovery charge q rr i dr = 35 a, v gs = 0 v, di dr /dt = 50 a/ s ? 58 ? nc marking 0 v 10 v v gs r l = 1.67 v dd 30 v i d = 18 a v out 4.7 ? lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. K3662 part no. (or abbreviation code)
2sK3662 2006-11-17 3 forward transfer admittance ? y fs ? (s) drain-source voltage v ds (v) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) gate-source voltage v gs (v) v ds ? v gs drain current i d (a) ? y fs ? ? i d drain current i d (a) r ds (on) ? i d drain-source on resistance r ds (on) (m ) 80 0 0 20 40 60 100 1 2 4 3 5 tc = ? 55c common source v ds = 10 v pulse test 25 100 0 1.0 0.2 0.4 0.6 0.8 v gs = 3 v 3.3 common source tc = 25c pulse test 3.5 4 6 10 8 0 40 10 20 30 10 0 0 40 100 5 2 20 60 80 common source tc = 25 c pulse test 1 3 4 4 6 4.2 v gs = 3 v 3.8 3.6 3.4 0 0 0.4 20 8 0.2 0.6 0.8 common source tc = 25 c pulse test 4 12 16 9 17 i d = 35 a 1.0 tc = ? 55c 100 25 5 1 100 10 5 30 300 100 30 common source v ds = 10 v pulse test 50 50 3 10 11 0 0 33 0 30 1 3 10 5 10 common source tc = 25 c pulse test v gs = 10 v 4 50 5 50
2sK3662 2006-11-17 4 drain power dissipation p d (w) gate threshold voltage v th (v) case temperature tc (c) r ds (on) ? tc drain-source on resistance r ds (on) (m ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) case temperature tc (c) v th ? tc case temperature tc (c) p d ? tc gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) 10 0.1 1 10 100 100 1000 10000 common source v gs = 0 v f = 1 mhz ta = 25c c iss c oss c rss 1 0 ? 0.2 ? 0.4 ? 0.6 ? 0.8 ? 1.0 ? 1.2 ? 1.4 ? 1.6 10 100 v gs = 0 v 3 5 10 common source tc = 25c pulse test 3 0 ? 80 ? 40 0 40 120 160 80 1 2 4 5 common source v ds = 10 v i d = 1 ma pulse test 30 20 0 0 40 80 120 160 10 40 common source v ds = 10 a i d = 1 ma pulse test 0 4 8 12 16 12 60 40 0 0 40 80 120 160 20 80 v dd = 48 v 24 v gs common source i d = 35 a tc = 25c pulse test v ds 15 0 ? 80 ? 40 0 40 120 160 80 5 10 20 25 common source pulse test v gs = 4 v 17 a, 9 a i d = 35 a v gs = 10 v i d = 35 a, 17 a, 9 a
2sK3662 2006-11-17 5 avalanche energy e as (mj) pulse width t w (s) r th ? t w normalized transient thermal impedance r th (t) /r th (ch-c) drain-source voltage v ds (v) safe operating area drain current i d (a) channel temperature (initial) t ch (c) e as ? t ch r g = 25 v dd = 25 v, l = 227 h ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss as 2 il 2 1 waveform i ar b vdss v dd v ds test circuit ? 15 v 15 v 1 0.1 10 100 3 1 m 10 m 100 m 1 10 0.00 single pulse 0.2 0.1 0.05 0.02 0.01 duty = 0.5 t p dm t duty = t/t r th (ch-c) = 3.57c/w 0.3 0.01 0.03 0.1 0.1 1 10 100 1 10 100 300 t = 1 ms * * single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. v dss max 30 3 0.3 t = 10 ms * i d ma x ( pulsed ) * i d max (continuous) 250 200 150 100 50 0 25 50 75 100 125 150
2sK3662 2006-11-17 6 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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